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NTZD3154N Small Signal MOSFET
20 V, 540 mA, Dual N-Channel
Features
* * * * * * * * *
Low RDS(on) Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm ESD Protected Gate These are Pb-Free Devices
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V(BR)DSS 20 RDS(on) Typ 400 mW @ 4.5 V 500 mW @ 2.5 V 700 mW @ 1.8 V D1 D2 540 mA ID Max (Note 1)
Applications
Load/Power Switches Power Supply Converter Circuits Battery Management Cell Phones, Digital Cameras, PDAs, Pagers, etc.
G1
G2
MAXIMUM RATINGS (TJ = 25C unless otherwise noted.)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State TA = 25C TA = 85C Symbol VDSS VGS ID PD Value 20 6.0 540 390 250 570 410 280 1.5 -55 to 150 350 260 mW A C mA C G1 2 Symbol RqJA Max 500 447 Unit C/W D2 3 S1 1 mW mA Unit V V mA 6 1 SOT-563-6 CASE 463A TV M G S1
N-Channel MOSFET
S2
MARKING DIAGRAM
TV M G G
Steady State tv5s TA = 25C TA = 85C
ID PD IDM TJ, TSTG IS TL
= Specific Device Code = Date Code = Pb-Free Package
tv5s tp = 10 ms
(Note: Microdot may be in either location)
Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s)
PINOUT: SOT-563
6 D1
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t v 5 s (Note 1)
5 G2
4 S2 Top View
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu. area = 1.127 in sq [1 oz] including traces).
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
(c) Semiconductor Components Industries, LLC, 2006
March, 2006 - Rev. 1
1
Publication Order Number: NTZD3154N/D
NTZD3154N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted.)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ VGS = 0 V VDS = 16 V VGS = 0 V, ID = 250 mA - TJ = 25C TJ = 125C 20 - - - - - 14 - - - - - 1.0 5.0 "5.0 mA V mV/C mA Symbol Test Condition Min Typ Max Unit
IDSS IGSS VGS(TH) VGS(TH)/TJ
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance
VDS = 0 V, VGS = "4.5 V VGS = VDS, ID = 250 mA - VGS = 4.5 V, ID = 540 mA
0.45 - - - - -
- 2.0 0.4 0.5 0.7 1.0
1.0 - 0.55 0.7 0.9 -
V mV/C W
RDS(on) Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge CISS COSS CRSS QG(TOT) QG(TH) QGS QGD td(ON) tr td(OFF) tf gFS
VGS = 2.5 V, ID = 500 mA VGS = 1.8 V, ID = 350 mA VDS = 10 V, ID = 540 mA
S
- VGS = 0 V, f = 1.0 MHz, VDS = 16 V - - - VGS = 4.5 V, VDS = 10 V; ID = 540 mA - - -
80 13 10 1.5 0.1 0.2 0.35
150 25 20 2.5 - - -
pF
nC
SWITCHING CHARACTERISTICS, VGS = V (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD tRR VGS = 0 V, IS = 350 mA TJ = 25C TJ = 125C - - - 0.7 0.6 6.5 1.2 - - ns V - VGS = 4.5 V, VDD = 10 V, ID = 540 mA, RG = 10 W - - - 6.0 4.0 16 8.0 - - - - ns
Reverse Recovery Time
VGS = 0 V, dISD/dt = 100 A/ms, IS = 350 mA
2. Surface-mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces). 3. Pulse Test: pulse width v 300 ms, duty cycle v2%. 4. Switching characteristics are independent of operating junction temperatures.
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NTZD3154N
TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted)
1.2 5.5 V 1.0 ID, DRAIN CURRENT (A) 0.8 0.6 VGS = 1.4 V 0.4 0.2 0 0 VGS = 1.2 V VGS = 1.0 V 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1.8 V VGS = 1.6 V VGS = 2.0 V to 2.2 V TJ = 25C ID, DRAIN CURRENT (A) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.5 1.0 TJ = 25C VDS w 10 V TJ = -55C TJ = 100C
1.5
2.0
2.5
3.0
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE CURRENT RESISTANCE (W)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 1 3 4 5 VGS, GATE-TO-SOURCE VOLTAGE (V) 2 6
Figure 2. Transfer Characteristics
0.9 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
ID = 0.54 A TJ = 25C
0.8 0.7 0.6 0.5 0.4 0.3 0.2
TJ = 25C VGS = 1.8 V
VGS = 2.5 V VGS = 4.5 V
0.4
0.6 0.8 ID, DRAIN CURRENT (A)
1
1.2
Figure 3. On-Resistance versus Gate-to-Source Voltage
2
Figure 4. On-Resistance versus Drain Current and Gate Voltage
1000
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
1.8 1.6 1.4 1.2 1 0.8 0.6 -50
IDSS, LEAKAGE (nA)
ID = 0.54 A VGS = 4.5 V
VGS = 0 V TJ = 150C
100
TJ = 100C 10
-25 0 25 50 75 100 125 150
2
4
6
8
10
12
14
16
18
20
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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NTZD3154N
TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted)
TJ = 25C VGS = 0 V QT VDS VGS
3
C, CAPACITANCE (pF)
150
4
16
100
CRSS CISS
12
2
8
50 VDS = 0 V VGS 0 VDS 5 COSS 10 15 20
QGS
1
QGD ID = 0.54 A TJ = 25C
4
0 5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0 1.6
Qg, TOTAL GATE CHARGE (nC)
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
100 IS, SOURCE CURRENT (A) VDS = 10 V ID = 0.2 A VGS = 4.5 V t, TIME (ns) td(OFF 10 tr
)
Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge
0.6 0.5 0.4 0.3 0.2 0.1 0 0.2 VGS = 0 V TJ = 25C
tf
td(ON)
1
1
10 RG, GATE RESISTANCE (W)
100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
ORDERING INFORMATION
Device NTZD3154NT1G NTZD3154NT5G Package SOT-563 (Pb-Free) SOT-563 (Pb-Free) Shipping 4000 / Tape & Reel 8000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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4
VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1
VGS, GATE-TO-SOURCE VOLTAGE (V)
200
5
20
NTZD3154N
PACKAGE DIMENSIONS
SOT-563, 6 LEAD CASE 463A-01 ISSUE F
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043
D -X-
6 5 4
A
L
1
2
3
E -Y- b
HE
e
5 6 PL M
C XY
0.08 (0.003)
SOLDERING FOOTPRINT*
0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394
0.5 0.5 0.0197 0.0197
SCALE 20:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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NTZD3154N/D

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